Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
SI7997DP-T1-GE3
Vishay Siliconix
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual Surface Mount 46W 2 P-Channel (Dual) 30V 60A 5.5 mOhm @ 20A,10V 2.2V @ 250μA 6200pF @ 15V
SI7997DP-T1-GE3
Vishay Siliconix
19,380
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual Surface Mount 46W 2 P-Channel (Dual) 30V 60A 5.5 mOhm @ 20A,10V 2.2V @ 250μA 6200pF @ 15V
SI7997DP-T1-GE3
Vishay Siliconix
19,380
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 60A PPAK SO-8
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual Surface Mount 46W 2 P-Channel (Dual) 30V 60A 5.5 mOhm @ 20A,10V 2.2V @ 250μA 6200pF @ 15V
19MT050XF
Vishay Semiconductor Diodes Division
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 500V 31A MTP
Bulk HEXFET -40°C ~ 150°C (TJ) 16-MTP Module 16-MTP Chassis Mount 1140W 4 N-Channel (H-Bridge) 500V 31A 220 mOhm @ 19A,10V 6V @ 250μA 7210pF @ 25V