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- Operating Temperature：
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- Supplier Device Package：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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Discover 25 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Diodes Incorporated |
6,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Diodes Incorporated |
6,860
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Diodes Incorporated |
6,860
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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- | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
5,144
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
5,144
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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- | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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20 V，DUAL P-CHANNEL TRENCH MOSF
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
2,265
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL P-CHANNEL TRENCH MOSF
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
2,265
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3 days |
-
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MOQ: 1 MPQ: 1
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20 V，DUAL P-CHANNEL TRENCH MOSF
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- | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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ROHM Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1A TUMT6
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Tape & Reel (TR) | - | 150°C (TJ) | 6-SMD，Flat Leads | TUMT6 | 1W | 2 P-Channel (Dual) | Logic Level Gate | 1A | 390 mOhm @ 1A，4.5V | 2V @ 1mA | 150pF @ 10V | ||
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ROHM Semiconductor |
1,931
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1A TUMT6
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Cut Tape (CT) | - | 150°C (TJ) | 6-SMD，Flat Leads | TUMT6 | 1W | 2 P-Channel (Dual) | Logic Level Gate | 1A | 390 mOhm @ 1A，4.5V | 2V @ 1mA | 150pF @ 10V | ||
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ROHM Semiconductor |
1,931
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1A TUMT6
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- | - | 150°C (TJ) | 6-SMD，Flat Leads | TUMT6 | 1W | 2 P-Channel (Dual) | Logic Level Gate | 1A | 390 mOhm @ 1A，4.5V | 2V @ 1mA | 150pF @ 10V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.9A SOT363
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- | - | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SOT-363 | 450mW | 2 P-Channel (Dual) | Standard | 900mA | 260 mOhm @ 880mA，4.5V | 1.2V @ 250μA | 184pF @ 10V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 2.1A 6TSOP
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Tape & Reel (TR) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | PG-TSOP-6-1 | 500mW | 2 N-Channel (Dual) | Logic Level Gate，2.5V Drive | 2.1A | 70 mOhm @ 2.1A，4.5V | 1.2V @ 11μA | 419pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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- | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA，4.5V | 950mV @ 250μA | 43pF @ 10V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.2A 6DSBGA
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Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 6-UFBGA，DSBGA | 6-DSBGA (1x1.5) | 800mW | 2 P-Channel (Dual) | Logic Level Gate | 1.2A | 100 mOhm @ 1A，4.5V | 1V @ 250μA | 195pF @ 10V |
