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- Supplier Device Package:
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- Current - Continuous Drain (Id) @ 25°C:
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Discover 12 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
12,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A PQFN
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A,4.5V | 1.1V @ 10μA | 270pF @ 25V | ||
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Infineon Technologies |
14,050
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A,4.5V | 1.1V @ 10μA | 270pF @ 25V | ||
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Infineon Technologies |
14,050
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
|
- | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A,4.5V | 1.1V @ 10μA | 270pF @ 25V | ||
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Panasonic Electronic Components |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 33V 5A WMINI8-F1
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Tape & Reel (TR) | - | 150°C (TJ) | 8-SMD,Flat Lead | WMini8-F1 | 1W | 2 N-Channel (Dual) | Standard | 33V | 5A | 38 mOhm @ 2.5A,10V | 2.5V @ 260μA | 220pF @ 10V | ||
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Panasonic Electronic Components |
2,422
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 33V 5A WMINI8-F1
|
Cut Tape (CT) | - | 150°C (TJ) | 8-SMD,Flat Lead | WMini8-F1 | 1W | 2 N-Channel (Dual) | Standard | 33V | 5A | 38 mOhm @ 2.5A,10V | 2.5V @ 260μA | 220pF @ 10V | ||
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Panasonic Electronic Components |
2,422
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 33V 5A WMINI8-F1
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- | - | 150°C (TJ) | 8-SMD,Flat Lead | WMini8-F1 | 1W | 2 N-Channel (Dual) | Standard | 33V | 5A | 38 mOhm @ 2.5A,10V | 2.5V @ 260μA | 220pF @ 10V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8TDSON
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Tape & Reel (TR) | Automotive,AEC-Q101,HEXFET | -55°C ~ 175°C (TJ) | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W | N and P-Channel Complementary | Logic Level Gate,2.5V Drive | 20V | 5.1A,3.2A | 55 mOhm @ 5.1A,4.5V | 1.4V @ 110μA | 419pF @ 10V | ||
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Infineon Technologies |
1,286
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8TDSON
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Cut Tape (CT) | Automotive,AEC-Q101,HEXFET | -55°C ~ 175°C (TJ) | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W | N and P-Channel Complementary | Logic Level Gate,2.5V Drive | 20V | 5.1A,3.2A | 55 mOhm @ 5.1A,4.5V | 1.4V @ 110μA | 419pF @ 10V | ||
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Infineon Technologies |
1,286
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8TDSON
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- | Automotive,AEC-Q101,HEXFET | -55°C ~ 175°C (TJ) | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W | N and P-Channel Complementary | Logic Level Gate,2.5V Drive | 20V | 5.1A,3.2A | 55 mOhm @ 5.1A,4.5V | 1.4V @ 110μA | 419pF @ 10V | ||
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Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8TDSON
|
Tape & Reel (TR) | Automotive,AEC-Q101,OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerTDFN | PG-TSDSON-8-FL | 2.5W | N and P-Channel Complementary | Logic Level Gate,2.5V Drive | 20V | 5.1A,3.2A | 55 mOhm @ 5.1A,4.5V | 1.4V @ 110μA | 419pF @ 10V | ||
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Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A PQFN
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A,4.5V | 1.1V @ 10μA | 270pF @ 25V | ||
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Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A PQFN
|
- | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A,4.5V | 1.1V @ 10μA | 270pF @ 25V |