Discover 12 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
IRLHS6376TRPBF
Infineon Technologies
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A PQFN
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 270pF @ 25V
IRLHS6376TRPBF
Infineon Technologies
14,050
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 270pF @ 25V
IRLHS6376TRPBF
Infineon Technologies
14,050
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
- HEXFET -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 270pF @ 25V
FC8J33040L
Panasonic Electronic Components
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 33V 5A WMINI8-F1
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead WMini8-F1 1W 2 N-Channel (Dual) Standard 33V 5A 38 mOhm @ 2.5A,10V 2.5V @ 260μA 220pF @ 10V
FC8J33040L
Panasonic Electronic Components
2,422
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 33V 5A WMINI8-F1
Cut Tape (CT) - 150°C (TJ) 8-SMD,Flat Lead WMini8-F1 1W 2 N-Channel (Dual) Standard 33V 5A 38 mOhm @ 2.5A,10V 2.5V @ 260μA 220pF @ 10V
FC8J33040L
Panasonic Electronic Components
2,422
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 33V 5A WMINI8-F1
- - 150°C (TJ) 8-SMD,Flat Lead WMini8-F1 1W 2 N-Channel (Dual) Standard 33V 5A 38 mOhm @ 2.5A,10V 2.5V @ 260μA 220pF @ 10V
BSZ15DC02KDHXTMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8TDSON
Tape & Reel (TR) Automotive,AEC-Q101,HEXFET -55°C ~ 175°C (TJ) 8-PowerTDFN PG-TSDSON-8-FL 2.5W N and P-Channel Complementary Logic Level Gate,2.5V Drive 20V 5.1A,3.2A 55 mOhm @ 5.1A,4.5V 1.4V @ 110μA 419pF @ 10V
BSZ15DC02KDHXTMA1
Infineon Technologies
1,286
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8TDSON
Cut Tape (CT) Automotive,AEC-Q101,HEXFET -55°C ~ 175°C (TJ) 8-PowerTDFN PG-TSDSON-8-FL 2.5W N and P-Channel Complementary Logic Level Gate,2.5V Drive 20V 5.1A,3.2A 55 mOhm @ 5.1A,4.5V 1.4V @ 110μA 419pF @ 10V
BSZ15DC02KDHXTMA1
Infineon Technologies
1,286
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8TDSON
- Automotive,AEC-Q101,HEXFET -55°C ~ 175°C (TJ) 8-PowerTDFN PG-TSDSON-8-FL 2.5W N and P-Channel Complementary Logic Level Gate,2.5V Drive 20V 5.1A,3.2A 55 mOhm @ 5.1A,4.5V 1.4V @ 110μA 419pF @ 10V
BSZ215CHXTMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8TDSON
Tape & Reel (TR) Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerTDFN PG-TSDSON-8-FL 2.5W N and P-Channel Complementary Logic Level Gate,2.5V Drive 20V 5.1A,3.2A 55 mOhm @ 5.1A,4.5V 1.4V @ 110μA 419pF @ 10V
IRLHS6376TR2PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A PQFN
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 270pF @ 25V
IRLHS6376TR2PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A PQFN
- HEXFET -55°C ~ 150°C (TJ) 6-VDFN Exposed Pad 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 270pF @ 25V