Discover 13 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
DMN3018SSD-13
Diodes Incorporated
10,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.7A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.5W 2 N-Channel (Dual) Logic Level Gate 6.7A 22 mOhm @ 10A,10V 2.1V @ 250μA 697pF @ 15V
DMN3018SSD-13
Diodes Incorporated
11,637
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.7A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.5W 2 N-Channel (Dual) Logic Level Gate 6.7A 22 mOhm @ 10A,10V 2.1V @ 250μA 697pF @ 15V
DMN3018SSD-13
Diodes Incorporated
11,637
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.7A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.5W 2 N-Channel (Dual) Logic Level Gate 6.7A 22 mOhm @ 10A,10V 2.1V @ 250μA 697pF @ 15V
DMT3011LDT-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A V-DFN3030-8
Tape & Reel (TR) - -55°C ~ 155°C (TJ) 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.9W 2 N-Channel (Dual) Asymmetrical Standard 8A,10.7A 20 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
DMT3011LDT-7
Diodes Incorporated
1,102
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A V-DFN3030-8
Cut Tape (CT) - -55°C ~ 155°C (TJ) 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.9W 2 N-Channel (Dual) Asymmetrical Standard 8A,10.7A 20 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
DMT3011LDT-7
Diodes Incorporated
1,102
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A V-DFN3030-8
- - -55°C ~ 155°C (TJ) 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.9W 2 N-Channel (Dual) Asymmetrical Standard 8A,10.7A 20 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
BSC150N03LDGATMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8TDSON
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Logic Level Gate 8A 15 mOhm @ 20A,10V 2.2V @ 250μA 1100pF @ 15V
BSC150N03LDGATMA1
Infineon Technologies
14
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8TDSON
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Logic Level Gate 8A 15 mOhm @ 20A,10V 2.2V @ 250μA 1100pF @ 15V
BSC150N03LDGATMA1
Infineon Technologies
14
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 8A 8TDSON
- OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Logic Level Gate 8A 15 mOhm @ 20A,10V 2.2V @ 250μA 1100pF @ 15V
DMC3026LSD-13
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.5A/6.2A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W N and P-Channel Logic Level Gate 6.5A,6.2A 25 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
DMC3026LSD-13
Diodes Incorporated
9
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.5A/6.2A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W N and P-Channel Logic Level Gate 6.5A,6.2A 25 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
DMC3026LSD-13
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.5A/6.2A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W N and P-Channel Logic Level Gate 6.5A,6.2A 25 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V
DMC3028LSDX-13
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W N and P-Channel Logic Level Gate 5.5A,5.8A 27 mOhm @ 6A,10V 3V @ 250μA 641pF @ 15V