Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Input Capacitance (Ciss) (Max) @ Vds
FDS9945
ON Semiconductor
15,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 3.5A 8-SO
Tape & Reel (TR) 2 N-Channel (Dual) Logic Level Gate 60V 3.5A 100 mOhm @ 3.5A,10V 420pF @ 30V
FDS9945
ON Semiconductor
18,747
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 3.5A 8-SO
Cut Tape (CT) 2 N-Channel (Dual) Logic Level Gate 60V 3.5A 100 mOhm @ 3.5A,10V 420pF @ 30V
FDS9945
ON Semiconductor
18,747
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 3.5A 8-SO
- 2 N-Channel (Dual) Logic Level Gate 60V 3.5A 100 mOhm @ 3.5A,10V 420pF @ 30V
SI4542DY
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
Tape & Reel (TR) N and P-Channel Standard 30V 6A 28 mOhm @ 6A,10V 830pF @ 15V
SI4542DY
ON Semiconductor
1,940
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
Cut Tape (CT) N and P-Channel Standard 30V 6A 28 mOhm @ 6A,10V 830pF @ 15V
SI4542DY
ON Semiconductor
1,940
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
- N and P-Channel Standard 30V 6A 28 mOhm @ 6A,10V 830pF @ 15V