Discover 14 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
CSD85301Q2T
Texas Instruments
3,250
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
CSD85301Q2T
Texas Instruments
3,389
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
CSD85301Q2T
Texas Instruments
3,389
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
- NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
CSD85301Q2
Texas Instruments
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
CSD85301Q2
Texas Instruments
3,979
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
CSD85301Q2
Texas Instruments
3,979
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6WSON
- NexFET -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WSON (2x2) 2.3W 2 N-Channel (Dual) Logic Level Gate,5V Drive 20V 5A 27 mOhm @ 5A,4.5V 1.2V @ 250μA 469pF @ 10V
STS8DN3LLH5
STMicroelectronics
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10A 8SO
Tape & Reel (TR) STripFET V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2.7W 2 N-Channel (Dual) Logic Level Gate 30V 10A 19 mOhm @ 5A,10V 1V @ 250μA 724pF @ 25V
STS8DN3LLH5
STMicroelectronics
1,102
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10A 8SO
Cut Tape (CT) STripFET V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2.7W 2 N-Channel (Dual) Logic Level Gate 30V 10A 19 mOhm @ 5A,10V 1V @ 250μA 724pF @ 25V
STS8DN3LLH5
STMicroelectronics
1,102
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10A 8SO
- STripFET V -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2.7W 2 N-Channel (Dual) Logic Level Gate 30V 10A 19 mOhm @ 5A,10V 1V @ 250μA 724pF @ 25V
IRF5850
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.2A 6TSOP
Tube - - SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135 mOhm @ 2.2A,4.5V 1.2V @ 250μA 320pF @ 15V
IRF5850TR
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.2A 6-TSOP
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135 mOhm @ 2.2A,4.5V 1.2V @ 250μA 320pF @ 15V
IRF5850TRPBF
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.2A 6-TSOP
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135 mOhm @ 2.2A,4.5V 1.2V @ 250μA 320pF @ 15V
IRF5850TRPBF
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.2A 6-TSOP
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135 mOhm @ 2.2A,4.5V 1.2V @ 250μA 320pF @ 15V
IRF5850TRPBF
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.2A 6-TSOP
- HEXFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 P-Channel (Dual) Logic Level Gate 20V 2.2A 135 mOhm @ 2.2A,4.5V 1.2V @ 250μA 320pF @ 15V