Discover 20 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
IRF7311TRPBF
Infineon Technologies
4,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.6A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7311TRPBF
Infineon Technologies
5,448
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.6A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7311TRPBF
Infineon Technologies
5,448
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.6A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
CSD88599Q5DC
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
CSD88599Q5DC
Texas Instruments
2,470
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
CSD88599Q5DC
Texas Instruments
2,470
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
- NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
CSD88599Q5DCT
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
CSD88599Q5DCT
Texas Instruments
240
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
CSD88599Q5DCT
Texas Instruments
240
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 22-VSON-CLIP
- NexFET -55°C ~ 150°C (TJ) 22-PowerTFDFN 22-VSON-CLIP (5x6) 12W 2 N-Channel (Half Bridge) Standard 60V - 2.1 mOhm @ 30A,10V 2.5V @ 250μA 4840pF @ 30V
IRF7317TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W N and P-Channel Logic Level Gate 20V 6.6A,5.3A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7317TRPBF
Infineon Technologies
3,986
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W N and P-Channel Logic Level Gate 20V 6.6A,5.3A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7317TRPBF
Infineon Technologies
3,986
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W N and P-Channel Logic Level Gate 20V 6.6A,5.3A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
FDS4501H
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V,20V 9.3A,5.6A 18 mOhm @ 9.3A,10V 3V @ 250μA 1958pF @ 10V
FDS4501H
ON Semiconductor
882
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V,20V 9.3A,5.6A 18 mOhm @ 9.3A,10V 3V @ 250μA 1958pF @ 10V
FDS4501H
ON Semiconductor
882
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Logic Level Gate 30V,20V 9.3A,5.6A 18 mOhm @ 9.3A,10V 3V @ 250μA 1958pF @ 10V
IRF7311PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.6A 8-SOIC
Tube HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7317PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8-SOIC
Tube HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W N and P-Channel Logic Level Gate 20V 6.6A,5.3A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
IRF7311TR
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.6A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 6.6A 29 mOhm @ 6A,4.5V 700mV @ 250μA 900pF @ 15V
EFC6612R-TF
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 23A EFCP
Tape & Reel (TR) - 150°C (TJ) 6-SMD,No Lead 6-CSP (1.77x3.54) 2.5W 2 N-Channel (Dual) Common Drain Logic Level Gate,2.5V Drive - - - - -
EFC6612R-A-TF
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 23A EFCP
Tape & Reel (TR) - - 6-SMD,No Lead 6-CSP (1.77x3.54) 2.5W 2 N-Channel (Dual) Asymmetrical Logic Level Gate,2.5V Drive - - - - -