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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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Discover 20 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | ||
Infineon Technologies |
4,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
5,448
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
5,448
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Texas Instruments |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Texas Instruments |
2,470
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
Cut Tape (CT) | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Texas Instruments |
2,470
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
- | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Texas Instruments |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
Tape & Reel (TR) | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Texas Instruments |
240
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
Cut Tape (CT) | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Texas Instruments |
240
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 60V 22-VSON-CLIP
|
- | NexFET | -55°C ~ 150°C (TJ) | 22-PowerTFDFN | 22-VSON-CLIP (5x6) | 12W | 2 N-Channel (Half Bridge) | Standard | 60V | - | 2.1 mOhm @ 30A,10V | 2.5V @ 250μA | 4840pF @ 30V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | N and P-Channel | Logic Level Gate | 20V | 6.6A,5.3A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
3,986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | N and P-Channel | Logic Level Gate | 20V | 6.6A,5.3A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
3,986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | N and P-Channel | Logic Level Gate | 20V | 6.6A,5.3A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V/20V 8SOIC
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1W | N and P-Channel | Logic Level Gate | 30V,20V | 9.3A,5.6A | 18 mOhm @ 9.3A,10V | 3V @ 250μA | 1958pF @ 10V | ||||
ON Semiconductor |
882
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V/20V 8SOIC
|
Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1W | N and P-Channel | Logic Level Gate | 30V,20V | 9.3A,5.6A | 18 mOhm @ 9.3A,10V | 3V @ 250μA | 1958pF @ 10V | ||||
ON Semiconductor |
882
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V/20V 8SOIC
|
- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1W | N and P-Channel | Logic Level Gate | 30V,20V | 9.3A,5.6A | 18 mOhm @ 9.3A,10V | 3V @ 250μA | 1958pF @ 10V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | N and P-Channel | Logic Level Gate | 20V | 6.6A,5.3A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A,4.5V | 700mV @ 250μA | 900pF @ 15V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 23A EFCP
|
Tape & Reel (TR) | - | 150°C (TJ) | 6-SMD,No Lead | 6-CSP (1.77x3.54) | 2.5W | 2 N-Channel (Dual) Common Drain | Logic Level Gate,2.5V Drive | - | - | - | - | - | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 23A EFCP
|
Tape & Reel (TR) | - | - | 6-SMD,No Lead | 6-CSP (1.77x3.54) | 2.5W | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate,2.5V Drive | - | - | - | - | - |