FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Package / Case：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
	DMHC6070LSD-13	Diodes Incorporated	2,500	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	2 N and 2 P-Channel (H-Bridge)	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	731pF @ 20V
	DMHC6070LSD-13	Diodes Incorporated	3,333	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	2 N and 2 P-Channel (H-Bridge)	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	731pF @ 20V
	DMHC6070LSD-13	Diodes Incorporated	3,333	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	2 N and 2 P-Channel (H-Bridge)	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	731pF @ 20V
	SI4590DY-T1-GE3	Vishay Siliconix	Inquiry	-	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W，3.4W	N and P-Channel	-	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	360pF @ 50V
	SI4590DY-T1-GE3	Vishay Siliconix	755	3 days	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	Cut Tape (CT)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W，3.4W	N and P-Channel	-	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	360pF @ 50V
	SI4590DY-T1-GE3	Vishay Siliconix	755	3 days	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	-	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	2.4W，3.4W	N and P-Channel	-	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	360pF @ 50V
	DMC6070LND-13	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 60V 8POWERDI MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 8POWERDI	Tape & Reel (TR)	-	8-PowerVDFN	PowerDI3333-8	1.4W	N and P-Channel	Standard	60V	3.1A，2.4A	85 mOhm @ 1.5A，10V	3V @ 250μA	731pF @ 20V
	DMC6070LND-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 60V 8POWERDI MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 8POWERDI	Tape & Reel (TR)	-	8-PowerVDFN	PowerDI3333-8	1.4W	N and P-Channel	Standard	60V	3.1A，2.4A	85 mOhm @ 1.5A，10V	3V @ 250μA	731pF @ 20V
	BSO215C	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 20V 3.7A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 3.7A 8SOIC	Tape & Reel (TR)	SIPMOS	8-SOIC (0.154"，3.90mm Width)	8-SO	2W	N and P-Channel	Logic Level Gate	20V	3.7A	100 mOhm @ 3.7A，10V	2V @ 10μA	246pF @ 25V
	DMC6070LFDH-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 60V V-DFN3030-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V V-DFN3030-8	Tape & Reel (TR)	-	8-WDFN	V-DFN3030-8	1.4W	N and P-Channel	Logic Level Gate	60V	3.1A，2.4A	85 mOhm @ 1.5A，10V	3V @ 250μA	731pF @ 20V
	DMC6070LFDH-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 60V V-DFN3030-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V V-DFN3030-8	Cut Tape (CT)	-	8-WDFN	V-DFN3030-8	1.4W	N and P-Channel	Logic Level Gate	60V	3.1A，2.4A	85 mOhm @ 1.5A，10V	3V @ 250μA	731pF @ 20V
	DMC6070LFDH-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 60V V-DFN3030-8 MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V V-DFN3030-8	-	-	8-WDFN	V-DFN3030-8	1.4W	N and P-Channel	Logic Level Gate	60V	3.1A，2.4A	85 mOhm @ 1.5A，10V	3V @ 250μA	731pF @ 20V

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