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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 11 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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EPC |
2,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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EPC |
2,457
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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EPC |
2,457
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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ON Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 5.5A 8SOIC
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A，10V | 3V @ 250μA | 460pF @ 15V | ||
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ON Semiconductor |
1,831
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 5.5A 8SOIC
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A，10V | 3V @ 250μA | 460pF @ 15V | ||
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ON Semiconductor |
1,831
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 5.5A 8SOIC
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5.5A | 40 mOhm @ 5.5A，10V | 3V @ 250μA | 460pF @ 15V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 100V BUMPED DIE
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Tray | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 800pF @ 50V | ||
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Central Semiconductor Corp |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 5.3A 8SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | 2W | 2 P-Channel (Dual) | Standard | 30V | 5.3A | 72 mOhm @ 2.7A，10V | 3V @ 250μA | 590pF @ 10V |
