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Discover 7 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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ROHM Semiconductor |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3A TSST8
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Tape & Reel (TR) | - | 150°C (TJ) | 8-SMD，Flat Lead | 8-TSST | 1W | 2 N-Channel (Dual) | Logic Level Gate，4V Drive | 30V | 3A | 71 mOhm @ 3A，10V | 2.5V @ 1A | 140pF @ 10V | ||
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ROHM Semiconductor |
3,296
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3A TSST8
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Cut Tape (CT) | - | 150°C (TJ) | 8-SMD，Flat Lead | 8-TSST | 1W | 2 N-Channel (Dual) | Logic Level Gate，4V Drive | 30V | 3A | 71 mOhm @ 3A，10V | 2.5V @ 1A | 140pF @ 10V | ||
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ROHM Semiconductor |
3,296
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3A TSST8
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- | - | 150°C (TJ) | 8-SMD，Flat Lead | 8-TSST | 1W | 2 N-Channel (Dual) | Logic Level Gate，4V Drive | 30V | 3A | 71 mOhm @ 3A，10V | 2.5V @ 1A | 140pF @ 10V | ||
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EPC |
5,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 300pF @ 40V | ||
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EPC |
5,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 300pF @ 40V | ||
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EPC |
5,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 300pF @ 40V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 80V BUMPED DIE
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Bulk | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 9.5A，38A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 300pF @ 40V |
