Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 18 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN3024LSD-13
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
Tape & Reel (TR) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 24 mOhm @ 7A,10V 608pF @ 15V
DMN3024LSD-13
Diodes Incorporated
3,825
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
Cut Tape (CT) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 24 mOhm @ 7A,10V 608pF @ 15V
DMN3024LSD-13
Diodes Incorporated
3,825
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.8A 8SO
- 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 6.8A 24 mOhm @ 7A,10V 608pF @ 15V
DMN4027SSD-13
Diodes Incorporated
10,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 5.4A 8SO
Tape & Reel (TR) 8-SOP 2 N-Channel (Dual) Logic Level Gate 40V 5.4A 27 mOhm @ 7A,10V 604pF @ 20V
DMN4027SSD-13
Diodes Incorporated
16,031
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 5.4A 8SO
Cut Tape (CT) 8-SO 2 N-Channel (Dual) Logic Level Gate 40V 5.4A 27 mOhm @ 7A,10V 604pF @ 20V
DMN4027SSD-13
Diodes Incorporated
16,031
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 5.4A 8SO
- 8-SO 2 N-Channel (Dual) Logic Level Gate 40V 5.4A 27 mOhm @ 7A,10V 604pF @ 20V
DMC4028SSD-13
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 8SOIC
Tape & Reel (TR) 8-SO N and P-Channel Logic Level Gate 40V 6.5A,4.8A 28 mOhm @ 6A,10V 604pF @ 20V
DMC4028SSD-13
Diodes Incorporated
4,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 8SOIC
Cut Tape (CT) 8-SO N and P-Channel Logic Level Gate 40V 6.5A,4.8A 28 mOhm @ 6A,10V 604pF @ 20V
DMC4028SSD-13
Diodes Incorporated
4,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 8SOIC
- 8-SO N and P-Channel Logic Level Gate 40V 6.5A,4.8A 28 mOhm @ 6A,10V 604pF @ 20V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Tape & Reel (TR) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Cut Tape (CT) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
3,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
- 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
1,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Tape & Reel (TR) 8-SOP 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
1,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
Cut Tape (CT) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMN3F31DN8TA
Diodes Incorporated
1,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.7A 8SOIC
- 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 5.7A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMC3F31DN8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Tape & Reel (TR) 8-SO N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMC3F31DN8TA
Diodes Incorporated
400
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
Cut Tape (CT) 8-SO N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 24 mOhm @ 7A,10V 608pF @ 15V
ZXMC3F31DN8TA
Diodes Incorporated
400
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6.8A/4.9A 8SO
- 8-SO N and P-Channel Logic Level Gate,4.5V Drive 30V 6.8A,4.9A 24 mOhm @ 7A,10V 608pF @ 15V