Drain to Source Voltage (Vdss):
Discover 32 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
SI7900AEDN-T1-E3
Vishay Siliconix
48,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? 1212-8 Dual PowerPAK? 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA -
SI7900AEDN-T1-E3
Vishay Siliconix
53,549
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? 1212-8 Dual PowerPAK? 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA -
SI7900AEDN-T1-E3
Vishay Siliconix
53,549
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? 1212-8 Dual PowerPAK? 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA -
DMN2014LHAB-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 9A 6-UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad U-DFN2030-6 (Type B) 800mW 2 N-Channel (Dual) Logic Level Gate 20V 9A 13 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
DMN2014LHAB-7
Diodes Incorporated
5,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 9A 6-UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad U-DFN2030-6 (Type B) 800mW 2 N-Channel (Dual) Logic Level Gate 20V 9A 13 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
DMN2014LHAB-7
Diodes Incorporated
5,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 9A 6-UDFN
- - -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad U-DFN2030-6 (Type B) 800mW 2 N-Channel (Dual) Logic Level Gate 20V 9A 13 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
TT8J13TCR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.5A TSST8
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead 8-TSST 1W 2 P-Channel (Dual) Logic Level Gate,1.5V Drive 12V 2.5A 62 mOhm @ 2.5A,4.5V 1V @ 1mA 2000pF @ 6V
TT8J13TCR
ROHM Semiconductor
2,337
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.5A TSST8
Cut Tape (CT) - 150°C (TJ) 8-SMD,Flat Lead 8-TSST 1W 2 P-Channel (Dual) Logic Level Gate,1.5V Drive 12V 2.5A 62 mOhm @ 2.5A,4.5V 1V @ 1mA 2000pF @ 6V
TT8J13TCR
ROHM Semiconductor
2,337
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 2.5A TSST8
- - 150°C (TJ) 8-SMD,Flat Lead 8-TSST 1W 2 P-Channel (Dual) Logic Level Gate,1.5V Drive 12V 2.5A 62 mOhm @ 2.5A,4.5V 1V @ 1mA 2000pF @ 6V
DMN2016LFG-7
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5.2A 8UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-PowerUDFN U-DFN3030-8 770mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18 mOhm @ 6A,4.5V 1.1V @ 250μA 1472pF @ 10V
DMN2016LFG-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5.2A 8UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-PowerUDFN U-DFN3030-8 770mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18 mOhm @ 6A,4.5V 1.1V @ 250μA 1472pF @ 10V
DMN2016LFG-7
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5.2A 8UDFN
- - -55°C ~ 150°C (TJ) 8-PowerUDFN U-DFN3030-8 770mW 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18 mOhm @ 6A,4.5V 1.1V @ 250μA 1472pF @ 10V
DMN2016LHAB-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 7.5A 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2030-6 1.2W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 7.5A 15.5 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
DMN2016LHAB-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 7.5A 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2030-6 1.2W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 7.5A 15.5 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
DMN2016LHAB-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 7.5A 6UDFN
- - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2030-6 1.2W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 7.5A 15.5 mOhm @ 4A,4.5V 1.1V @ 250μA 1550pF @ 10V
BSO207PHXUMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A 8DSO
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 1.6W 2 P-Channel (Dual) Logic Level Gate 20V 5A 45 mOhm @ 5.7A,4.5V 1.2V @ 44μA 1650pF @ 15V
BSO207PHXUMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A 8DSO
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 1.6W 2 P-Channel (Dual) Logic Level Gate 20V 5A 45 mOhm @ 5.7A,4.5V 1.2V @ 44μA 1650pF @ 15V
BSO207PHXUMA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A 8DSO
- OptiMOS -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) PG-DSO-8 1.6W 2 P-Channel (Dual) Logic Level Gate 20V 5A 45 mOhm @ 5.7A,4.5V 1.2V @ 44μA 1650pF @ 15V
SI7900AEDN-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A PPAK 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? 1212-8 Dual PowerPAK? 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA -
SI7900AEDN-T1-GE3
Vishay Siliconix
6
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A PPAK 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? 1212-8 Dual PowerPAK? 1212-8 Dual 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA -