Operating Temperature:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
SQ3989EV-T1_GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Tape & Reel (TR) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.67W 2 P-Channel (Dual) Standard 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Cut Tape (CT) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.67W 2 P-Channel (Dual) Standard 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
- Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.67W 2 P-Channel (Dual) Standard 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA -
HS8K11TB
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A/11A HSML
Tape & Reel (TR) - 150°C (TJ) 8-UDFN Exposed Pad HSML3030L10 2W 2 N-Channel (Dual) Logic Level Gate 7A,11A 17.9 mOhm @ 7A,10V 2.5V @ 1mA 500pF @ 15V
HS8K11TB
ROHM Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A/11A HSML
Cut Tape (CT) - 150°C (TJ) 8-UDFN Exposed Pad HSML3030L10 2W 2 N-Channel (Dual) Logic Level Gate 7A,11A 17.9 mOhm @ 7A,10V 2.5V @ 1mA 500pF @ 15V
HS8K11TB
ROHM Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A/11A HSML
- - 150°C (TJ) 8-UDFN Exposed Pad HSML3030L10 2W 2 N-Channel (Dual) Logic Level Gate 7A,11A 17.9 mOhm @ 7A,10V 2.5V @ 1mA 500pF @ 15V