Series:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
Tape & Reel (TR) - 4-XFBGA,WLBGA - 1.45W 2 N-Channel (Dual) Common Drain Standard - - - -
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
Cut Tape (CT) - 4-XFBGA,WLBGA - 1.45W 2 N-Channel (Dual) Common Drain Standard - - - -
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
- - 4-XFBGA,WLBGA - 1.45W 2 N-Channel (Dual) Common Drain Standard - - - -
CSD86360Q5D
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 50A 8SON
Tape & Reel (TR) NexFET 8-PowerLDFN 8-LSON (5x6) 13W 2 N-Channel (Half Bridge) Logic Level Gate 25V 50A 2.1V @ 250μA 2060pF @ 12.5
CSD86360Q5D
Texas Instruments
1,409
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 50A 8SON
Cut Tape (CT) NexFET 8-PowerLDFN 8-LSON (5x6) 13W 2 N-Channel (Half Bridge) Logic Level Gate 25V 50A 2.1V @ 250μA 2060pF @ 12.5
CSD86360Q5D
Texas Instruments
1,409
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 50A 8SON
- NexFET 8-PowerLDFN 8-LSON (5x6) 13W 2 N-Channel (Half Bridge) Logic Level Gate 25V 50A 2.1V @ 250μA 2060pF @ 12.5