Discover 19 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
FDY2000PZ
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 446mW 2 P-Channel (Dual) Logic Level Gate 20V 350mA 1.2 Ohm @ 350mA,4.5V 1.5V @ 250μA 100pF @ 10V
FDY2000PZ
ON Semiconductor
1,803
3 days
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 446mW 2 P-Channel (Dual) Logic Level Gate 20V 350mA 1.2 Ohm @ 350mA,4.5V 1.5V @ 250μA 100pF @ 10V
FDY2000PZ
ON Semiconductor
1,803
3 days
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.35A SOT-563F
- PowerTrench -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 446mW 2 P-Channel (Dual) Logic Level Gate 20V 350mA 1.2 Ohm @ 350mA,4.5V 1.5V @ 250μA 100pF @ 10V
DMN1150UFL3-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CHA 12V 2A DFN1310
Tape & Reel (TR) Automotive,AEC-Q101 -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 390mW 2 N-Channel (Dual) Standard 12V 2A 150 mOhm @ 1A,4.5V 1V @ 250μA 115pF @ 6V
DMN1150UFL3-7
Diodes Incorporated
2,975
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CHA 12V 2A DFN1310
Cut Tape (CT) Automotive,AEC-Q101 -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 390mW 2 N-Channel (Dual) Standard 12V 2A 150 mOhm @ 1A,4.5V 1V @ 250μA 115pF @ 6V
DMN1150UFL3-7
Diodes Incorporated
2,975
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CHA 12V 2A DFN1310
- Automotive,AEC-Q101 -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 390mW 2 N-Channel (Dual) Standard 12V 2A 150 mOhm @ 1A,4.5V 1V @ 250μA 115pF @ 6V
FDG6335N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.7A SOT-363
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 N-Channel (Dual) Logic Level Gate 20V 700mA 300 mOhm @ 700mA,4.5V 1.5V @ 250μA 113pF @ 10V
FDG6335N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.7A SOT-363
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 N-Channel (Dual) Logic Level Gate 20V 700mA 300 mOhm @ 700mA,4.5V 1.5V @ 250μA 113pF @ 10V
FDG6335N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.7A SOT-363
- PowerTrench -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW 2 N-Channel (Dual) Logic Level Gate 20V 700mA 300 mOhm @ 700mA,4.5V 1.5V @ 250μA 113pF @ 10V
SI3850ADV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
SI3850ADV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
SI3850ADV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
FDY2001PZ
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.15A SOT-563F
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 446mW 2 P-Channel (Dual) Logic Level Gate 20V 150mA 8 Ohm @ 150mA,4.5V 1.5V @ 250μA 100pF @ 10V
SI3850ADV-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
SI3850ADV-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6-TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
SI3850ADV-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 1.4A 6-TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 1.08W N and P-Channel,Common Drain Logic Level Gate 20V 1.4A,960mA 300 mOhm @ 500mA,4.5V 1.5V @ 250μA -
EM6J1T2R
ROHM Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.2A EMT6
Tape & Reel (TR) - 150°C (TJ) SOT-563,SOT-666 EMT6 150mW 2 P-Channel (Dual) Logic Level Gate 20V 200mA 1.2 Ohm @ 200mA,4.5V 1V @ 100μA 115pF @ 10V
EM6J1T2R
ROHM Semiconductor
8,063
3 days
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.2A EMT6
Cut Tape (CT) - 150°C (TJ) SOT-563,SOT-666 EMT6 150mW 2 P-Channel (Dual) Logic Level Gate 20V 200mA 1.2 Ohm @ 200mA,4.5V 1V @ 100μA 115pF @ 10V
EM6J1T2R
ROHM Semiconductor
8,063
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.2A EMT6
- - 150°C (TJ) SOT-563,SOT-666 EMT6 150mW 2 P-Channel (Dual) Logic Level Gate 20V 200mA 1.2 Ohm @ 200mA,4.5V 1V @ 100μA 115pF @ 10V