FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Power - Max：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
	DMG4932LSD-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 9.5A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 9.5A 8SO	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.19W	Logic Level Gate	30V	9.5A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	DMG4932LSD-13	Diodes Incorporated	1,190	3 days	-	MOSFET 2N-CH 30V 9.5A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 9.5A 8SO	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.19W	Logic Level Gate	30V	9.5A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	DMG4932LSD-13	Diodes Incorporated	1,190	3 days	-	MOSFET 2N-CH 30V 9.5A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 9.5A 8SO	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.19W	Logic Level Gate	30V	9.5A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	SQJQ906E-T1_GE3	Vishay Siliconix	Inquiry	-	-	MOSFET 2 N-CH 40V POWERPAK8X8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 40V POWERPAK8X8	Tape & Reel (TR)	Automotive，AEC-Q101，TrenchFET	-55°C ~ 175°C (TJ)	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual	50W	Standard	40V	95A (Tc)	3.3 mOhm @ 5A，10V	3.5V @ 250μA	3600pF @ 20V
	SQJQ906E-T1_GE3	Vishay Siliconix	Inquiry	-	-	MOSFET 2 N-CH 40V POWERPAK8X8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 40V POWERPAK8X8	Cut Tape (CT)	Automotive，AEC-Q101，TrenchFET	-55°C ~ 175°C (TJ)	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual	50W	Standard	40V	95A (Tc)	-	3.5V @ 250μA	3600pF @ 20V
	SQJQ906E-T1_GE3	Vishay Siliconix	Inquiry	-	-	MOSFET 2 N-CH 40V POWERPAK8X8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 40V POWERPAK8X8	-	Automotive，AEC-Q101，TrenchFET	-55°C ~ 175°C (TJ)	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual	50W	Standard	40V	95A (Tc)	-	3.5V @ 250μA	3600pF @ 20V
	DMS3019SSD-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 7A/5.7A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A/5.7A 8SO	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	1.19W	Logic Level Gate	30V	7A，5.7A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	DMS3019SSD-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 7A/5.7A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A/5.7A 8SO	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	1.19W	Logic Level Gate	30V	7A，5.7A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	DMS3019SSD-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 7A/5.7A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 7A/5.7A 8SO	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOIC	1.19W	Logic Level Gate	30V	7A，5.7A	15 mOhm @ 9A，10V	2.4V @ 250μA	1932pF @ 15V
	IPG20N06S3L-23	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 55V 20A TDSON-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 55V 20A TDSON-8	Tape & Reel (TR)	OptiMOS	-55°C ~ 175°C (TJ)	8-PowerVDFN	PG-TDSON-8-4	45W	Logic Level Gate	55V	20A	23 mOhm @ 16A，10V	2.2V @ 20μA	2950pF @ 25V

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