Discover 22 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
IRF7316GTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316GTRPBF
Infineon Technologies
3,745
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316GTRPBF
Infineon Technologies
3,745
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
BUK7K32-100EX
Nexperia USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 29A LFPAK56
Tape & Reel (TR) - -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 64W 2 N-Channel (Dual) Standard 100V 29A 27.5 mOhm @ 5A,10V 4V @ 1mA 2137pF @ 25V
BUK7K32-100EX
Nexperia USA Inc.
32
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 29A LFPAK56
Cut Tape (CT) - -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 64W 2 N-Channel (Dual) Standard 100V 29A 27.5 mOhm @ 5A,10V 4V @ 1mA 2137pF @ 25V
BUK7K32-100EX
Nexperia USA Inc.
32
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 29A LFPAK56
- - -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 64W 2 N-Channel (Dual) Standard 100V 29A 27.5 mOhm @ 5A,10V 4V @ 1mA 2137pF @ 25V
IRF7316PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8-SOIC
Tube HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
AON6812
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 27A 8-DFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 27A 4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AON6812
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 27A 8-DFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 27A 4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AON6812
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 27A 8-DFN
- - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 27A 4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AON6810
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 25A 8-DFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 25A 4.4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AON6810
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 25A 8-DFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 25A 4.4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AON6810
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 25A 8-DFN
- - -55°C ~ 150°C (TJ) 8-SMD,Flat Lead Exposed Pad 8-DFN-EP (5.2x5.55) 4.1W 2 N-Channel (Dual) Common Drain Logic Level Gate 30V 25A 4.4 mOhm @ 20A,10V 2.2V @ 250μA 1720pF @ 15V
AUIRF7316QTR
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V - 58 mOhm @ 4.9A,10V 3V @ 250μA 710pF @ 25V
IRF7316TR
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316QTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V
IRF7316QTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 4.9A 8SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58 mOhm @ 4.9A,10V 1V @ 250μA 710pF @ 25V