FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
	FMP26-02P	IXYS	50	3 days	-	MOSFET N/P-CH 200V 26A/17A I4PAC MOQ: 1 MPQ: 1	MOSFET N/P-CH 200V 26A/17A I4PAC	Tube	Polar	i4-Pac?-5	ISOPLUS i4-PAC?	Through Hole	125W	N and P-Channel	Standard	200V	26A，17A	60 mOhm @ 25A，10V	5V @ 250μA	2720pF @ 25V
	SI7962DP-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET 2N-CH 40V 7.1A PPAK SO-8 MOQ: 1 MPQ: 1	MOSFET 2N-CH 40V 7.1A PPAK SO-8	Tape & Reel (TR)	TrenchFET	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual	Surface Mount	1.4W	2 N-Channel (Dual)	Standard	40V	7.1A	17 mOhm @ 11.1A，10V	4.5V @ 250μA	-
	SI4941EDY-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET 2P-CH 30V 10A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 10A 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	3.6W	2 P-Channel (Dual)	Logic Level Gate	30V	10A	21 mOhm @ 8.3A，10V	2.8V @ 250μA	-
	SI4941EDY-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET 2P-CH 30V 10A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 10A 8-SOIC	Cut Tape (CT)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	3.6W	2 P-Channel (Dual)	Logic Level Gate	30V	10A	21 mOhm @ 8.3A，10V	2.8V @ 250μA	-
	SI4941EDY-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET 2P-CH 30V 10A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 10A 8-SOIC	-	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	3.6W	2 P-Channel (Dual)	Logic Level Gate	30V	10A	21 mOhm @ 8.3A，10V	2.8V @ 250μA	-
	SI4923DY-T1-E3	Vishay Siliconix	Inquiry	-	-	MOSFET 2P-CH 30V 6.2A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 6.2A 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.1W	2 P-Channel (Dual)	Logic Level Gate	30V	6.2A	21 mOhm @ 8.3A，10V	3V @ 250μA	-
	SI4923DY-T1-GE3	Vishay Siliconix	Inquiry	-	-	MOSFET 2P-CH 30V 6.2A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 6.2A 8-SOIC	Tape & Reel (TR)	TrenchFET	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.1W	2 P-Channel (Dual)	Logic Level Gate	30V	6.2A	21 mOhm @ 8.3A，10V	3V @ 250μA	-
	FMP36-015P	IXYS	Inquiry	-	-	MOSFET N/P-CH 150V 36A/22A I4PAC MOQ: 1 MPQ: 1	MOSFET N/P-CH 150V 36A/22A I4PAC	Tube	Polar	i4-Pac?-5	ISOPLUS i4-PAC?	Through Hole	125W	N and P-Channel	Standard	150V	36A，22A	40 mOhm @ 31A，10V	5.5V @ 250μA	2250pF @ 25V

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