Series:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
BSC072N03LDGATMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 11.5A 8TDSON
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 57W 2 N-Channel (Dual) Logic Level Gate 30V 11.5A 7.2 mOhm @ 20A,10V 2.2V @ 250μA 3500pF @ 15V
BSC072N03LDGATMA1
Infineon Technologies
619
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 11.5A 8TDSON
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 57W 2 N-Channel (Dual) Logic Level Gate 30V 11.5A 7.2 mOhm @ 20A,10V 2.2V @ 250μA 3500pF @ 15V
BSC072N03LDGATMA1
Infineon Technologies
619
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 11.5A 8TDSON
- OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 57W 2 N-Channel (Dual) Logic Level Gate 30V 11.5A 7.2 mOhm @ 20A,10V 2.2V @ 250μA 3500pF @ 15V
NVDD5894NLT4G
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 14A DPAK
Tape & Reel (TR) - -55°C ~ 175°C (TJ) TO-252-5,DPak (4 Leads + Tab),TO-252AD D-Pak 5-Lead 3.8W 2 N-Channel (Dual) Common Drain Standard 40V 14A 10 mOhm @ 50A,10V 2.5V @ 250μA 2103pF @ 25V