Series:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
BUK9K25-40EX
Nexperia USA Inc.
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 18.2A 56LFPAK
Tape & Reel (TR) TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 32W Logic Level Gate 40V 18.2A 24 mOhm @ 5A,10V 2.1V @ 1mA 701pF @ 25V
BUK9K25-40EX
Nexperia USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 18.2A 56LFPAK
Cut Tape (CT) TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 32W Logic Level Gate 40V 18.2A 24 mOhm @ 5A,10V 2.1V @ 1mA 701pF @ 25V
BUK9K25-40EX
Nexperia USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 18.2A 56LFPAK
- TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D 32W Logic Level Gate 40V 18.2A 24 mOhm @ 5A,10V 2.1V @ 1mA 701pF @ 25V
CWDM305ND TR13
Central Semiconductor Corp
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 560pF @ 10V
CWDM305ND TR13
Central Semiconductor Corp
2,490
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 560pF @ 10V
CWDM305ND TR13
Central Semiconductor Corp
2,490
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 560pF @ 10V