Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds
FDD8426H
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 12A/10A DPAK
PowerTrench -55°C ~ 150°C (TJ) TO-252-5,DPak (4 Leads + Tab),TO-252AD TO-252-4L 1.3W N and P-Channel 40V 12A,10A 12 mOhm @ 12A,10V 3V @ 250μA 2735pF @ 20V
IPG20N06S4L11ATMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 65W 2 N-Channel (Dual) 60V 20A 11.2 mOhm @ 17A,10V 2.2V @ 28μA 4020pF @ 25V
IPG20N06S4L11AATMA1
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Automotive,AEC-Q101,OptiMOS -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) 60V 20A 11.2 mOhm @ 17A,10V 2.2V @ 28μA 4020pF @ 25V