Package / Case:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 8 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Package / Case Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Input Capacitance (Ciss) (Max) @ Vds
APTM50AM35FTG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 99A SP4
SP4 SP4 2 N-Channel (Half Bridge) 500V 99A 39 mOhm @ 49.5A,10V 14000pF @ 25V
APTM50DHM35G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 99A SP6
SP6 SP6 2 N-Channel (Dual) Asymmetrical 500V 99A 39 mOhm @ 49.5A,10V 14000pF @ 25V
APTM20DUM08TG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 200V 208A SP4
SP4 SP4 2 N-Channel (Dual) 200V 208A 10 mOhm @ 104A,10V 14400pF @ 25V
APTM20AM08FTG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 200V 208A SP4
SP4 SP4 2 N-Channel (Half Bridge) 200V 208A 10 mOhm @ 104A,10V 14400pF @ 25V
APTM20HM08FG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 200V 208A SP6
SP6 SP6 4 N-Channel (H-Bridge) 200V 208A 10 mOhm @ 104A,10V 14400pF @ 25V
APTM50HM35FG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 500V 99A SP6
SP6 SP6 4 N-Channel (H-Bridge) 500V 99A 39 mOhm @ 49.5A,10V 14000pF @ 25V
APTM20DHM08G
Microsemi Corporation
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 200V 208A SP6
SP6 SP6 2 N-Channel (Dual) Asymmetrical 200V 208A 10 mOhm @ 104A,10V 14400pF @ 25V
APTM50DUM35TG
Microsemi Corporation
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 99A SP4
SP4 SP4 2 N-Channel (Dual) 500V 99A 39 mOhm @ 49.5A,10V 14000pF @ 25V