- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Selected conditions:
Discover 3 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | |
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 170A SP4
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SP4 | SP4 | 1250W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 170A | 19 mOhm @ 85A，10V | ||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 163A SP6
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SP6 | SP6 | 1136W | 2 N-Channel (Dual) | Standard | 163A | 22.5 mOhm @ 81.5A，10V | ||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 163A SP6
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SP6 | SP6 | 1136W | 2 N-Channel (Half Bridge) | Standard | 163A | 22.5 mOhm @ 81.5A，10V |
