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Discover 16 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Infineon Technologies |
8,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.7A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | ||
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Infineon Technologies |
10,697
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.7A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | ||
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Infineon Technologies |
10,697
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.7A 8-SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 9nC @ 4.5V | ||
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Alpha & Omega Semiconductor Inc. |
6,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 6A | 35 mOhm @ 6A，10V | 2.4V @ 250μA | 16nC @ 10V | ||
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Alpha & Omega Semiconductor Inc. |
7,836
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6A 8-SOIC
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | 2W | 2 P-Channel (Dual) | Logic Level Gate | 6A | 35 mOhm @ 6A，10V | 2.4V @ 250μA | 16nC @ 10V | ||
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Alpha & Omega Semiconductor Inc. |
7,836
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6A 8-SOIC
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | 2W | 2 P-Channel (Dual) | Logic Level Gate | 6A | 35 mOhm @ 6A，10V | 2.4V @ 250μA | 16nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 30A PWRPAIR3X3
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Tape & Reel (TR) | PowerPAIR，TrenchFET | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power33 (3x3) | 16.7W，31W | 2 N-Channel (Half Bridge) | Standard | 30A，40A | 9.5 mOhm @ 15.6A，10V | 2.4V @ 250μA | 19nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 30A PWRPAIR3X3
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Cut Tape (CT) | PowerPAIR，TrenchFET | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power33 (3x3) | 16.7W，31W | 2 N-Channel (Half Bridge) | Standard | 30A，40A | 9.5 mOhm @ 15.6A，10V | 2.4V @ 250μA | 19nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 30A PWRPAIR3X3
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- | PowerPAIR，TrenchFET | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power33 (3x3) | 16.7W，31W | 2 N-Channel (Half Bridge) | Standard | 30A，40A | 9.5 mOhm @ 15.6A，10V | 2.4V @ 250μA | 19nC @ 10V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 9.7A 8-SOIC
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Tube | - | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 9.7A | 15.5 mOhm @ 9.7A，10V | 2.35V @ 25μA | 90nC @ 4.5V | ||
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Alpha & Omega Semiconductor Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 6A | 35 mOhm @ 6A，10V | 2.4V @ 250μA | 16nC @ 10V | ||
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Alpha & Omega Semiconductor Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 6A | 35 mOhm @ 6A，10V | 2.4V @ 250μA | 16nC @ 10V | ||
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Central Semiconductor Corp |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 4.2A | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | |||
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Central Semiconductor Corp |
2,971
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 4.2A | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | |||
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Central Semiconductor Corp |
2,971
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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- | - | -55°C ~ 150°C (TJ) | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 4.2A | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | |||
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Alpha & Omega Semiconductor Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 12A TO252-4L
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- | - | -55°C ~ 150°C (TJ) | TO-252-5，DPak (4 Leads + Tab)，TO-252AD | TO-252-4L | 15.6W，31W | 2 N-Channel (Dual) | Standard | 12A (Tc) | 16.5 mOhm @ 12A，10V，22.5 mOhm @ 9.7A，10V | 2.5V @ 250μA | 10nC @ 4.5V，15nC @ 4.5V |
