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Discover 21 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | |
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Vishay Siliconix |
15,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
16,676
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
16,676
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
57,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
59,164
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
59,164
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
12,294
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
12,294
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W，3.4W | N and P-Channel | Logic Level Gate | 60V | 5.3A，3.9A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
1,925
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
1,925
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.3A | 58 mOhm @ 4.3A，10V | 20nC @ 10V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.5A/10A PWR56
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-MLP (5x6)，Power56 | 1W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A，10A | 21.5 mOhm @ 7.5A，10V | 14nC @ 10V | ||
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ON Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.5A/10A PWR56
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-MLP (5x6)，Power56 | 1W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A，10A | 21.5 mOhm @ 7.5A，10V | 14nC @ 10V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.5A/10A PWR56
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-MLP (5x6)，Power56 | 1W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 7.5A，10A | 21.5 mOhm @ 7.5A，10V | 14nC @ 10V | ||
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Micro Commercial Co |
Inquiry
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-
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MOQ: 1 MPQ: 1
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N&P-CHANNEL MOSFET，SOP-8 PACKAG
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Tape & Reel (TR) | - | 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2W | N and P-Channel | - | 60V | 4.5A，3.5A | 80 mOhm @ 3.1A，10V | 9nC @ 4.5V | ||
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Micro Commercial Co |
Inquiry
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-
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MOQ: 1 MPQ: 1
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N&P-CHANNEL MOSFET，SOP-8 PACKAG
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Cut Tape (CT) | - | 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2W | N and P-Channel | - | 60V | 4.5A，3.5A | 80 mOhm @ 3.1A，10V | 9nC @ 4.5V |
