- Packaging：
-
- Series：
-
- Supplier Device Package：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Selected conditions:
Discover 16 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|
|
|
Texas Instruments |
20,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 20A 8SON
|
Tape & Reel (TR) | NexFET | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | 30V | 20A | - | 2.1V @ 250μA | 5.8nC @ 4.5V | ||
|
|
|
Texas Instruments |
21,271
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 20A 8SON
|
Cut Tape (CT) | NexFET | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | 30V | 20A | - | 2.1V @ 250μA | 5.8nC @ 4.5V | ||
|
|
|
Texas Instruments |
21,271
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 20A 8SON
|
- | NexFET | 8-PowerLDFN | 8-LSON (3.3x3.3) | 6W | 2 N-Channel (Half Bridge) | 30V | 20A | - | 2.1V @ 250μA | 5.8nC @ 4.5V | ||
|
|
|
Infineon Technologies |
4,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tape & Reel (TR) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | 20V | 6.6A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
5,448
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Cut Tape (CT) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | 20V | 6.6A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
5,448
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
- | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | 20V | 6.6A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Tape & Reel (TR) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | N and P-Channel | 20V | 6.6A，5.3A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
3,986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Cut Tape (CT) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | N and P-Channel | 20V | 6.6A，5.3A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
3,986
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
- | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | N and P-Channel | 20V | 6.6A，5.3A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 8A PPAK SO-8
|
Tape & Reel (TR) | TrenchFET | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 17.8W | 2 N-Channel (Dual) | 30V | 8A | 21 mOhm @ 8A，10V | 2.8V @ 250μA | 21nC @ 10V | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 8A PPAK SO-8
|
Cut Tape (CT) | TrenchFET | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 17.8W | 2 N-Channel (Dual) | 30V | 8A | 21 mOhm @ 8A，10V | 2.8V @ 250μA | 21nC @ 10V | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 8A PPAK SO-8
|
- | TrenchFET | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 17.8W | 2 N-Channel (Dual) | 30V | 8A | 21 mOhm @ 8A，10V | 2.8V @ 250μA | 21nC @ 10V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tube | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | 20V | 6.6A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 8-SOIC
|
Tube | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | N and P-Channel | 20V | 6.6A，5.3A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V | ||
|
|
|
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 8A PPAK SO-8
|
Tape & Reel (TR) | TrenchFET | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 17.8W | 2 N-Channel (Dual) | 30V | 8A | 21 mOhm @ 8A，10V | 2.8V @ 250μA | 21nC @ 10V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.6A 8-SOIC
|
Tape & Reel (TR) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | 20V | 6.6A | 29 mOhm @ 6A，4.5V | 700mV @ 250μA | 27nC @ 4.5V |
