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Discover 21 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Diodes Incorporated |
7,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 30V 2.7A/2A SM8
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-223-8 | SM8 | 1.3W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.7A，2A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
8,466
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 30V 2.7A/2A SM8
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-223-8 | SM8 | 1.3W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.7A，2A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
8,466
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 30V 2.7A/2A SM8
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- | - | -55°C ~ 150°C (TJ) | SOT-223-8 | SM8 | 1.3W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.7A，2A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
4,404
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
4,404
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
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- | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
765
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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- | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A 8MLP
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.13W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
2,769
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A 8MLP
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.13W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
2,769
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A 8MLP
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- | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.13W | 2 N-Channel (Dual) | Logic Level Gate | 2.9A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
573
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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Cut Tape (CT) | - | - | 8-VDFN Exposed Pad | 8-MLP (3x3) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
573
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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- | - | - | 8-VDFN Exposed Pad | 8-MLP (3x3) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 30V 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 870mW | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.17A，1.64A | 125 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
978
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 30V 8-SOIC
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 870mW | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.17A，1.64A | 125 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
978
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 30V 8-SOIC
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 870mW | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 2.17A，1.64A | 125 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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Tape & Reel (TR) | - | - | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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Cut Tape (CT) | - | - | 8-VDFN Exposed Pad | 8-MLP (3x3) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V | ||
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Diodes Incorporated |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
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- | - | - | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.7W | N and P-Channel | Logic Level Gate | 2.9A，2.1A | 120 mOhm @ 2.5A，10V | 1V @ 250μA (Min) | 3.9nC @ 10V |
