Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
SM6K2T110
ROHM Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.2A SOT-457
Tape & Reel (TR) SC-74,SOT-457 SMT6 300mW 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.4 Ohm @ 200mA,10V 2.5V @ 1mA 4.4nC @ 10V
SM6K2T110
ROHM Semiconductor
7,554
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.2A SOT-457
Cut Tape (CT) SC-74,SOT-457 SMT6 300mW 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.4 Ohm @ 200mA,10V 2.5V @ 1mA 4.4nC @ 10V
SM6K2T110
ROHM Semiconductor
7,554
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.2A SOT-457
- SC-74,SOT-457 SMT6 300mW 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.4 Ohm @ 200mA,10V 2.5V @ 1mA 4.4nC @ 10V
VT6J1T2CR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.1A VMT6
Tape & Reel (TR) 6-SMD,Flat Leads VMT6 120mW 2 P-Channel (Dual) Logic Level Gate,1.2V Drive 20V 100mA 3.8 Ohm @ 100mA,4.5V 1V @ 100μA -
VT6J1T2CR
ROHM Semiconductor
7,905
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.1A VMT6
Cut Tape (CT) 6-SMD,Flat Leads VMT6 120mW 2 P-Channel (Dual) Logic Level Gate,1.2V Drive 20V 100mA 3.8 Ohm @ 100mA,4.5V 1V @ 100μA -
VT6J1T2CR
ROHM Semiconductor
7,905
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.1A VMT6
- 6-SMD,Flat Leads VMT6 120mW 2 P-Channel (Dual) Logic Level Gate,1.2V Drive 20V 100mA 3.8 Ohm @ 100mA,4.5V 1V @ 100μA -