Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Gate Charge (Qg) (Max) @ Vgs
QS8M13TCR
ROHM Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A/5A TSMT8
Tape & Reel (TR) 1.5W N and P-Channel Logic Level Gate 6A,5A 5.5nC @ 5V
QS8M13TCR
ROHM Semiconductor
7,340
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A/5A TSMT8
Cut Tape (CT) 1.5W N and P-Channel Logic Level Gate 6A,5A 5.5nC @ 5V
QS8M13TCR
ROHM Semiconductor
7,340
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A/5A TSMT8
- 1.5W N and P-Channel Logic Level Gate 6A,5A 5.5nC @ 5V
QS8K13TCR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A TSMT8
Tape & Reel (TR) 550mW 2 N-Channel (Dual) Standard 6A 20nC @ 10V
QS8K13TCR
ROHM Semiconductor
1,890
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A TSMT8
Cut Tape (CT) 550mW 2 N-Channel (Dual) Standard 6A 20nC @ 10V
QS8K13TCR
ROHM Semiconductor
1,890
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A TSMT8
- 550mW 2 N-Channel (Dual) Standard 6A 20nC @ 10V