Operating Temperature:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
NDS9945
ON Semiconductor
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 3.5A 8-SOIC
Tape & Reel (TR) -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW Logic Level Gate 60V 3.5A 100 mOhm @ 3.5A,10V 3V @ 250μA 30nC @ 10V
NDS9945
ON Semiconductor
4,738
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 3.5A 8-SOIC
Cut Tape (CT) -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW Logic Level Gate 60V 3.5A 100 mOhm @ 3.5A,10V 3V @ 250μA 30nC @ 10V
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
Tape & Reel (TR) -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W Standard 30V 20A (Tc) 20 mOhm @ 10A,10V 2.5V @ 250μA 4nC @ 4.5V
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
4,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
Cut Tape (CT) -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W Standard 30V 20A (Tc) 20 mOhm @ 10A,10V 2.5V @ 250μA 4nC @ 4.5V
TSM200N03DPQ33 RGG
Taiwan Semiconductor Corporation
4,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 30V 20A 8PDFN
- -55°C ~ 150°C (TJ) 8-PowerWDFN 8-PDFN (3x3) 20W Standard 30V 20A (Tc) 20 mOhm @ 10A,10V 2.5V @ 250μA 4nC @ 4.5V
NDS9955
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 50V 3A 8-SOIC
Tape & Reel (TR) - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW Logic Level Gate 50V 3A 130 mOhm @ 3A,10V 3V @ 250μA 30nC @ 10V
NDS9955
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 50V 3A 8-SOIC
Cut Tape (CT) - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW Logic Level Gate 50V 3A 130 mOhm @ 3A,10V 3V @ 250μA 30nC @ 10V