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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Gate Charge (Qg) (Max) @ Vgs:
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Discover 7 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | ||
ON Semiconductor |
2,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 3.5A 8-SOIC
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | Logic Level Gate | 60V | 3.5A | 100 mOhm @ 3.5A,10V | 3V @ 250μA | 30nC @ 10V | ||||
ON Semiconductor |
4,738
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 3.5A 8-SOIC
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | Logic Level Gate | 60V | 3.5A | 100 mOhm @ 3.5A,10V | 3V @ 250μA | 30nC @ 10V | ||||
Taiwan Semiconductor Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 20A 8PDFN
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-PDFN (3x3) | 20W | Standard | 30V | 20A (Tc) | 20 mOhm @ 10A,10V | 2.5V @ 250μA | 4nC @ 4.5V | ||||
Taiwan Semiconductor Corporation |
4,980
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 20A 8PDFN
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-PDFN (3x3) | 20W | Standard | 30V | 20A (Tc) | 20 mOhm @ 10A,10V | 2.5V @ 250μA | 4nC @ 4.5V | ||||
Taiwan Semiconductor Corporation |
4,980
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 20A 8PDFN
|
- | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-PDFN (3x3) | 20W | Standard | 30V | 20A (Tc) | 20 mOhm @ 10A,10V | 2.5V @ 250μA | 4nC @ 4.5V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 50V 3A 8-SOIC
|
Tape & Reel (TR) | - | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | Logic Level Gate | 50V | 3A | 130 mOhm @ 3A,10V | 3V @ 250μA | 30nC @ 10V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 50V 3A 8-SOIC
|
Cut Tape (CT) | - | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | Logic Level Gate | 50V | 3A | 130 mOhm @ 3A,10V | 3V @ 250μA | 30nC @ 10V |