Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
SIZ730DT-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SIZ730DT-T1-GE3
Vishay Siliconix
5,975
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SIZ730DT-T1-GE3
Vishay Siliconix
5,975
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
- TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SIZ790DT-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
Tape & Reel (TR) SkyFET,TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SIZ790DT-T1-GE3
Vishay Siliconix
4,190
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
Cut Tape (CT) SkyFET,TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SIZ790DT-T1-GE3
Vishay Siliconix
4,190
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 16A 6-POWERPAIR
- SkyFET,TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) Logic Level Gate 16A,35A 9.3 mOhm @ 15A,10V 2.2V @ 250μA 24nC @ 10V
SI4542DY
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Standard 6A 28 mOhm @ 6A,10V 3V @ 250μA 13nC @ 5V
SI4542DY
ON Semiconductor
1,940
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Standard 6A 28 mOhm @ 6A,10V 3V @ 250μA 13nC @ 5V
SI4542DY
ON Semiconductor
1,940
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6A 8SOIC
- PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1W N and P-Channel Standard 6A 28 mOhm @ 6A,10V 3V @ 250μA 13nC @ 5V