Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
FDS3992
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 4.5A 8-SO
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 2.5W Standard 100V 4.5A 62 mOhm @ 4.5A,10V 4V @ 250μA 15nC @ 10V
FDS3992
ON Semiconductor
2,033
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 4.5A 8-SO
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 2.5W Standard 100V 4.5A 62 mOhm @ 4.5A,10V 4V @ 250μA 15nC @ 10V
FDS3992
ON Semiconductor
2,033
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 4.5A 8-SO
- PowerTrench -55°C ~ 150°C (TJ) 2.5W Standard 100V 4.5A 62 mOhm @ 4.5A,10V 4V @ 250μA 15nC @ 10V
SQ4946AEY-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 7A
Tape & Reel (TR) TrenchFET -55°C ~ 175°C (TJ) 4W Logic Level Gate 60V 7A 40 mOhm @ 4.5A,10V 2.5V @ 250μA 18nC @ 10V
SQ4946AEY-T1_GE3
Vishay Siliconix
2,443
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 7A
Cut Tape (CT) TrenchFET -55°C ~ 175°C (TJ) 4W Logic Level Gate 60V 7A 40 mOhm @ 4.5A,10V 2.5V @ 250μA 18nC @ 10V
SQ4946AEY-T1_GE3
Vishay Siliconix
2,443
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 7A
- TrenchFET -55°C ~ 175°C (TJ) 4W Logic Level Gate 60V 7A 40 mOhm @ 4.5A,10V 2.5V @ 250μA 18nC @ 10V