Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
ZXMN6A09DN8TA
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 4.3A 8-SOIC
Tape & Reel (TR) 8-SO 1.25W 2 N-Channel (Dual) 4.3A 40 mOhm @ 8.2A,10V 3V @ 250μA 24.2nC @ 5V
ZXMN6A09DN8TA
Diodes Incorporated
2,913
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 4.3A 8-SOIC
Cut Tape (CT) 8-SO 1.25W 2 N-Channel (Dual) 4.3A 40 mOhm @ 8.2A,10V 3V @ 250μA 24.2nC @ 5V
ZXMN6A09DN8TA
Diodes Incorporated
2,913
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 4.3A 8-SOIC
- 8-SO 1.25W 2 N-Channel (Dual) 4.3A 40 mOhm @ 8.2A,10V 3V @ 250μA 24.2nC @ 5V
ZXMC6A09DN8TA
Diodes Incorporated
1,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 8-SOIC
Tape & Reel (TR) 8-SOP 1.8W N and P-Channel 3.9A,3.7A 45 mOhm @ 8.2A,10V 1V @ 250μA (Min) 24.2nC @ 10V
ZXMC6A09DN8TA
Diodes Incorporated
1,438
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 8-SOIC
Cut Tape (CT) 8-SO 1.8W N and P-Channel 3.9A,3.7A 45 mOhm @ 8.2A,10V 1V @ 250μA (Min) 24.2nC @ 10V
ZXMC6A09DN8TA
Diodes Incorporated
1,438
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 8-SOIC
- 8-SO 1.8W N and P-Channel 3.9A,3.7A 45 mOhm @ 8.2A,10V 1V @ 250μA (Min) 24.2nC @ 10V
ZXMN6A09DN8TC
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 4.3A 8SOIC
Tape & Reel (TR) 8-SOP 1.25W 2 N-Channel (Dual) 4.3A 40 mOhm @ 8.2A,10V 3V @ 250μA 24.2nC @ 5V