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Discover 12 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Vishay Siliconix |
6,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.5A SC70-6L
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual | 7.8W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 43 mOhm @ 3.7A，4.5V | 900mV @ 250μA | 12.5nC @ 8V | ||
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Vishay Siliconix |
6,919
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.5A SC70-6L
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual | 7.8W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 43 mOhm @ 3.7A，4.5V | 900mV @ 250μA | 12.5nC @ 8V | ||
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Vishay Siliconix |
6,919
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.5A SC70-6L
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- | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SC-70-6 Dual | PowerPAK? SC-70-6 Dual | 7.8W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.5A | 43 mOhm @ 3.7A，4.5V | 900mV @ 250μA | 12.5nC @ 8V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 4A/3.2A VS-8
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Tape & Reel (TR) | - | 150°C (TJ) | 8-SMD，Flat Lead | VS-8 (2.9x1.5) | 330mW | N and P-Channel | Logic Level Gate | 30V | 4A，3.2A | 50 mOhm @ 2A，10V | 2V @ 1mA | 10nC @ 10V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 4A/3.2A VS-8
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Cut Tape (CT) | - | 150°C (TJ) | 8-SMD，Flat Lead | VS-8 (2.9x1.5) | 330mW | N and P-Channel | Logic Level Gate | 30V | 4A，3.2A | 50 mOhm @ 2A，10V | 2V @ 1mA | 10nC @ 10V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 4A/3.2A VS-8
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- | - | 150°C (TJ) | 8-SMD，Flat Lead | VS-8 (2.9x1.5) | 330mW | N and P-Channel | Logic Level Gate | 30V | 4A，3.2A | 50 mOhm @ 2A，10V | 2V @ 1mA | 10nC @ 10V | ||
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ROHM Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A MPT6
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Tape & Reel (TR) | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V | ||
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ROHM Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A MPT6
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Cut Tape (CT) | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V | ||
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ROHM Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A MPT6
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- | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V | ||
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ROHM Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8A/6A MPT6
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Tape & Reel (TR) | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | N and P-Channel | Logic Level Gate，4V Drive | 30V | 8A，6A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V | ||
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ROHM Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8A/6A MPT6
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Cut Tape (CT) | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | N and P-Channel | Logic Level Gate，4V Drive | 30V | 8A，6A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V | ||
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ROHM Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 8A/6A MPT6
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- | - | 150°C (TJ) | 6-SMD，Flat Leads | MPT6 | 2W | N and P-Channel | Logic Level Gate，4V Drive | 30V | 8A，6A | 25 mOhm @ 8A，10V | 2.5V @ 1mA | 7.3nC @ 5V |
