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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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Discover 12 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Texas Instruments |
1,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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Tape & Reel (TR) | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
1,861
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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Cut Tape (CT) | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
1,861
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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- | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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Tape & Reel (TR) | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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Cut Tape (CT) | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 1.6A 6WLP
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- | NexFET | 6-UFBGA，DSBGA | 6-DSBGA | 750mW | 2 P-Channel (Dual) Common Source | Logic Level Gate | 20V | 1.6A | 68 mOhm @ 1A，4.5V | 1.1V @ 250μA | 2.5nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 3A 9DSBGA
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Tape & Reel (TR) | NexFET | 9-UFBGA，DSBGA | 9-DSBGA | 700mW | 2 P-Channel (Dual) | Logic Level Gate | - | 3A | - | 900mV @ 250μA | 3.9nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 3A 9DSBGA
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Cut Tape (CT) | NexFET | 9-UFBGA，DSBGA | 9-DSBGA | 700mW | 2 P-Channel (Dual) | Logic Level Gate | - | 3A | - | 900mV @ 250μA | 3.9nC @ 4.5V | ||
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Texas Instruments |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 3A 9DSBGA
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- | NexFET | 9-UFBGA，DSBGA | 9-DSBGA | 700mW | 2 P-Channel (Dual) | Logic Level Gate | - | 3A | - | 900mV @ 250μA | 3.9nC @ 4.5V | ||
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Toshiba Semiconductor and Storage |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4A UDFN
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Tape & Reel (TR) | - | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2W | 2 N-Channel (Dual) | Logic Level Gate，1.5V Drive | 20V | 4A | 33 mOhm @ 4A，4.5V | 1V @ 1mA | 3.6nC @ 4.5V | |||
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Toshiba Semiconductor and Storage |
5,725
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4A UDFN
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Cut Tape (CT) | - | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2W | 2 N-Channel (Dual) | Logic Level Gate，1.5V Drive | 20V | 4A | 33 mOhm @ 4A，4.5V | 1V @ 1mA | 3.6nC @ 4.5V | |||
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Toshiba Semiconductor and Storage |
5,725
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4A UDFN
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- | - | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 2W | 2 N-Channel (Dual) | Logic Level Gate，1.5V Drive | 20V | 4A | 33 mOhm @ 4A，4.5V | 1V @ 1mA | 3.6nC @ 4.5V |
