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- Selected conditions:
Discover 4 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 8SOP
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 2W | 2 P-Channel (Dual) | Standard | 20V | 4.7A (Tc) | 60 mOhm @ 4.7A，4.5V | 1.4V @ 250μA | 8.5nC @ 4.5V | ||
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 8SOP
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 2W | 2 P-Channel (Dual) | Standard | 20V | 4.7A (Tc) | 60 mOhm @ 4.7A，4.5V | 1.4V @ 250μA | 8.5nC @ 4.5V | ||
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 P-CH 20V 4.7A 8SOP
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 2W | 2 P-Channel (Dual) | Standard | 20V | 4.7A (Tc) | 60 mOhm @ 4.7A，4.5V | 1.4V @ 250μA | 8.5nC @ 4.5V | ||
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Renesas Electronics America |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5A 8SOP
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Tape & Reel (TR) | 150°C (TJ) | 8-PowerWDFN | 1.12W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5A | 56 mOhm @ 2.5A，10V | - | 13.4nC @ 10V |
