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- Current - Continuous Drain (Id) @ 25°C:
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Discover 16 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | ||
Nexperia USA Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.5A 6DFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
5,144
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.5A 6DFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
5,144
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.5A 6DFN
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- | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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20 V,DUAL P-CHANNEL TRENCH MOSF
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
2,265
|
3 days |
-
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MOQ: 1 MPQ: 1
|
20 V,DUAL P-CHANNEL TRENCH MOSF
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
2,265
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
20 V,DUAL P-CHANNEL TRENCH MOSF
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- | - | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 380mW | 2 P-Channel (Dual) | Standard | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SC89-6
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | 220mW | N and P-Channel | Logic Level Gate | - | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 4.5V | ||||
Vishay Siliconix |
750
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SC89-6
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | 220mW | N and P-Channel | Logic Level Gate | - | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 4.5V | ||||
Vishay Siliconix |
750
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V SC89-6
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- | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | 220mW | N and P-Channel | Logic Level Gate | - | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 4.5V | ||||
Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V SC89-6
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | 220mW | 2 N-Channel (Dual) | Logic Level Gate | 610mA (Ta) | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 8V | ||||
Vishay Siliconix |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V SC89-6
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | - | 220mW | 2 N-Channel (Dual) | Logic Level Gate | 610mA (Ta) | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 8V | ||||
Vishay Siliconix |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V SC89-6
|
- | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | - | 220mW | 2 N-Channel (Dual) | Logic Level Gate | 610mA (Ta) | 396 mOhm @ 500mA,4.5V | 1V @ 250μA | 2nC @ 8V | ||||
Nexperia USA Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.5A 6DFN
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.5A 6DFN
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Nexperia USA Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.5A 6DFN
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- | TrenchFET | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 265mW | 2 P-Channel (Dual) | Logic Level Gate | 500mA | 1.4 Ohm @ 500mA,4.5V | 950mV @ 250μA | 2.1nC @ 4.5V | ||||
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.33A ES6
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Tape & Reel (TR) | - | 150°C (TJ) | SOT-563,SOT-666 | ES6 (1.6x1.6) | 150mW | 2 P-Channel (Dual) | Logic Level Gate | 330mA | 1.31 Ohm @ 100mA,4.5V | 1V @ 1mA | 1.2nC @ 4V |