Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
DMT3009LDT-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 30A V-DFN3030-8
Tape & Reel (TR) - 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.2W 2 N-Channel (Dual) Asymmetrical Standard 30A 11.1 mOhm @ 14.4A,10V 3V @ 250μA 20nC @ 15V
DMT3009LDT-7
Diodes Incorporated
953
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 30A V-DFN3030-8
Cut Tape (CT) - 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.2W 2 N-Channel (Dual) Asymmetrical Standard 30A 11.1 mOhm @ 14.4A,10V 3V @ 250μA 20nC @ 15V
DMT3009LDT-7
Diodes Incorporated
953
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 30A V-DFN3030-8
- - 8-VDFN Exposed Pad V-DFN3030-8 (Type K) 1.2W 2 N-Channel (Dual) Asymmetrical Standard 30A 11.1 mOhm @ 14.4A,10V 3V @ 250μA 20nC @ 15V
SIZ910DT-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 40A POWERPAIR
Tape & Reel (TR) TrenchFET 8-PowerWDFN 8-PowerPair? 48W,100W 2 N-Channel (Half Bridge) Logic Level Gate 40A 5.8 mOhm @ 20A,10V 2.2V @ 250μA 40nC @ 10V
SIZ910DT-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 40A POWERPAIR
Cut Tape (CT) TrenchFET 8-PowerWDFN 8-PowerPair? 48W,100W 2 N-Channel (Half Bridge) Logic Level Gate 40A 5.8 mOhm @ 20A,10V 2.2V @ 250μA 40nC @ 10V
SIZ910DT-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 40A POWERPAIR
- TrenchFET 8-PowerWDFN 8-PowerPair? 48W,100W 2 N-Channel (Half Bridge) Logic Level Gate 40A 5.8 mOhm @ 20A,10V 2.2V @ 250μA 40nC @ 10V
IRF7335D1TR
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10A 14-SOIC
Tape & Reel (TR) FETKY 14-SOIC (0.154",3.90mm Width) 14-SOIC 2W 2 N-Channel (Dual) Asymmetrical Logic Level Gate 10A 17.5 mOhm @ 10A,4.5V 1V @ 250μA 20nC @ 4.5V