- Packaging：
-
- Series：
-
- Package / Case：
-
- Supplier Device Package：
-
- FET Feature：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Selected conditions:
Discover 8 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
|
Tape & Reel (TR) | PowerTrench，SyncFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 6.9A，8.2A | 27 mOhm @ 6.9A，10V | 3V @ 250μA | 15nC @ 10V | ||
|
|
|
ON Semiconductor |
1,771
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
|
Cut Tape (CT) | PowerTrench，SyncFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 6.9A，8.2A | 27 mOhm @ 6.9A，10V | 3V @ 250μA | 15nC @ 10V | ||
|
|
|
ON Semiconductor |
1,771
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
|
- | PowerTrench，SyncFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 6.9A，8.2A | 27 mOhm @ 6.9A，10V | 3V @ 250μA | 15nC @ 10V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
|
Tape & Reel (TR) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 7.8A，8.9A | 21.8 mOhm @ 7.8A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | ||
|
|
|
Infineon Technologies |
2,451
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
|
Cut Tape (CT) | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 7.8A，8.9A | 21.8 mOhm @ 7.8A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | ||
|
|
|
Infineon Technologies |
2,451
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
|
- | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 7.8A，8.9A | 21.8 mOhm @ 7.8A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC
|
Tube | HEXFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 7.8A，8.9A | 21.8 mOhm @ 7.8A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | ||
|
|
|
Alpha & Omega Semiconductor Inc. |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6A
|
Tape & Reel (TR) | - | 8-PowerSMD，Flat Leads | 8-DFN-EP (3x3) | 4.1W | 2 N-Channel (Dual) Asymmetrical | Standard | 6A | 14.5 mOhm @ 6A，10V | 2.2V @ 250μA | 15nC @ 10V |
