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Discover 8 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
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STMicroelectronics |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 450V 0.4A 8SOIC
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Tape & Reel (TR) | SuperMESH | 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 450V | 400mA | 4.5 Ohm @ 500mA，10V | 3.7V @ 250μA | 10nC @ 10V | ||
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STMicroelectronics |
3,434
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 450V 0.4A 8SOIC
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Cut Tape (CT) | SuperMESH | 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 450V | 400mA | 4.5 Ohm @ 500mA，10V | 3.7V @ 250μA | 10nC @ 10V | ||
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STMicroelectronics |
3,434
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 450V 0.4A 8SOIC
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- | SuperMESH | 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 450V | 400mA | 4.5 Ohm @ 500mA，10V | 3.7V @ 250μA | 10nC @ 10V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.3A PQFN
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 6-VQFN | 6-PQFN (2x2) | 1.4W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A，10V | 2.4V @ 10μA | 3.7nC @ 10V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.3A PQFN
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-VQFN | 6-PQFN (2x2) | 1.4W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A，10V | 2.4V @ 10μA | 3.7nC @ 10V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.3A PQFN
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- | HEXFET | -55°C ~ 150°C (TJ) | 6-VQFN | 6-PQFN (2x2) | 1.4W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A，10V | 2.4V @ 10μA | 3.7nC @ 10V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.3A PQFN
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-PowerVDFN | 6-PQFN (2x2) | 1.4W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A，10V | 2.4V @ 10μA | 3.7nC @ 10V | ||
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Infineon Technologies |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.3A PQFN
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- | HEXFET | -55°C ~ 150°C (TJ) | 6-PowerVDFN | 6-PQFN (2x2) | 1.4W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A，10V | 2.4V @ 10μA | 3.7nC @ 10V |
