- Packaging：
-
- Package / Case：
-
- Supplier Device Package：
-
- FET Feature：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Selected conditions:
Discover 6 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | |
|
|
|
ON Semiconductor |
2,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 2.7A 8-SOIC
|
Tape & Reel (TR) | PowerTrench | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 100V | 2.7A | 105 mOhm @ 2.7A，10V | 4.1nC @ 10V | ||
|
|
|
ON Semiconductor |
3,363
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 2.7A 8-SOIC
|
Cut Tape (CT) | PowerTrench | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 100V | 2.7A | 105 mOhm @ 2.7A，10V | 4.1nC @ 10V | ||
|
|
|
ON Semiconductor |
3,363
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 2.7A 8-SOIC
|
- | PowerTrench | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 N-Channel (Dual) | Standard | 100V | 2.7A | 105 mOhm @ 2.7A，10V | 4.1nC @ 10V | ||
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
Tape & Reel (TR) | GreenBridge PowerTrench | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 5nC @ 10V | ||
|
|
|
ON Semiconductor |
644
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
Cut Tape (CT) | GreenBridge PowerTrench | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 5nC @ 10V | ||
|
|
|
ON Semiconductor |
644
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 100V/80V 12-MLP
|
- | GreenBridge PowerTrench | 12-WDFN Exposed Pad | 12-MLP (5x4.5) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 5nC @ 10V |
