Discover 15 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
FDS8928A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V,20V 5.5A,4A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
FDS8928A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V,20V 5.5A,4A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
FDS8928A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/20V 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW N and P-Channel Logic Level Gate 30V,20V 5.5A,4A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
IRF9910TRPBF
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 9.3 mOhm @ 12A,10V 2.55V @ 250μA 11nC @ 4.5V
IRF9910TRPBF
Infineon Technologies
82
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 9.3 mOhm @ 12A,10V 2.55V @ 250μA 11nC @ 4.5V
IRF9910TRPBF
Infineon Technologies
82
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A/12A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 9.3 mOhm @ 12A,10V 2.55V @ 250μA 11nC @ 4.5V
IRF9910TR
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 13.4 mOhm @ 10A,10V 2.55V @ 250μA 11nC @ 4.5V
IRF9910
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A 8-SOIC
Tube HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 13.4 mOhm @ 10A,10V 2.55V @ 250μA 11nC @ 4.5V
IRF9910PBF
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Tube HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 N-Channel (Dual) Logic Level Gate 20V 10A,12A 13.4 mOhm @ 10A,10V 2.55V @ 250μA 11nC @ 4.5V
FDS8926A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8-SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
FDS8926A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8-SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
FDS8926A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8-SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 30 mOhm @ 5.5A,4.5V 1V @ 250μA 28nC @ 4.5V
FW707-TL-E
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 8A 8SOP
Tape & Reel (TR) - 150°C (TJ) 8-SOIC (0.173",4.40mm Width) 8-SOP 2.5W 2 P-Channel (Dual) Logic Level Gate 30V 8A 26 mOhm @ 8A,10V - 18nC @ 10V
GWS9294
Intersil
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 10.1A 4QFN
Tube - -55°C ~ 150°C (TJ) 4-VDFN 4-QFN (2x2) 3.6W 2 N-Channel (Dual) Common Drain Standard 20V 10.1A (Ta) 13 mOhm @ 6.5A,4.5V 1.5V @ 1mA 11nC @ 4V
BSM180D12P3C007
ROHM Semiconductor
1
3 days
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MOQ: 1  MPQ: 1
SIC POWER MODULE
Bulk - 175°C (TJ) Module Module 880W 2 N-Channel (Dual) Standard 1200V (1.2kV) - - 5.6V @ 50mA -