FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
		Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
			BSO615CGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	Tape & Reel (TR)	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			BSO615CGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	Cut Tape (CT)	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			BSO615CGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	-	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			BSO615NGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 60V 2.6A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 2.6A 8SOIC	Tape & Reel (TR)	SIPMOS	PG-DSO-8	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A，4.5V	2V @ 20μA	20nC @ 10V
			BSO615NGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 60V 2.6A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 2.6A 8SOIC	Cut Tape (CT)	SIPMOS	PG-DSO-8	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A，4.5V	2V @ 20μA	20nC @ 10V
			BSO615NGHUMA1	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 60V 2.6A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 2.6A 8SOIC	-	SIPMOS	PG-DSO-8	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A，4.5V	2V @ 20μA	20nC @ 10V
			BSO615N	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 60V 2.6A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 2.6A 8SOIC	Tape & Reel (TR)	SIPMOS	PG-DSO-8	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A，4.5V	2V @ 20μA	20nC @ 10V
			BSO615N	Infineon Technologies	Inquiry	-	-	MOSFET 2N-CH 60V 2.6A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 2.6A 8SOIC	Cut Tape (CT)	SIPMOS	PG-DSO-8	2 N-Channel (Dual)	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A，4.5V	2V @ 20μA	20nC @ 10V
			IRF7350PBF	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 100V 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 100V 8SOIC	Tube	HEXFET	8-SO	N and P-Channel	Standard	100V	2.1A，1.5A	210 mOhm @ 2.1A，10V	4V @ 250μA	28nC @ 10V
			BSO615CT	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	Tape & Reel (TR)	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			BSO615CT	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	Cut Tape (CT)	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			BSO615CT	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 60V 3.1A/2A 8SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 60V 3.1A/2A 8SOIC	-	SIPMOS	PG-DSO-8	N and P-Channel	Logic Level Gate	60V	3.1A，2A	110 mOhm @ 3.1A，10V	2V @ 20μA	22.5nC @ 10V
			IRF7350TRPBF	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 100V 2.1A 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 100V 2.1A 8-SOIC	Tape & Reel (TR)	HEXFET	8-SO	N and P-Channel	Standard	100V	2.1A，1.5A	210 mOhm @ 2.1A，10V	4V @ 250μA	28nC @ 10V
			IRF7350TRPBF	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 100V 2.1A 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 100V 2.1A 8-SOIC	Cut Tape (CT)	HEXFET	8-SO	N and P-Channel	Standard	100V	2.1A，1.5A	210 mOhm @ 2.1A，10V	4V @ 250μA	28nC @ 10V
			IRF7350TRPBF	Infineon Technologies	Inquiry	-	-	MOSFET N/P-CH 100V 2.1A 8-SOIC MOQ: 1 MPQ: 1	MOSFET N/P-CH 100V 2.1A 8-SOIC	-	HEXFET	8-SO	N and P-Channel	Standard	100V	2.1A，1.5A	210 mOhm @ 2.1A，10V	4V @ 250μA	28nC @ 10V

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