Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
AON2803
Alpha & Omega Semiconductor Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.8A 6DFN
Tape & Reel (TR) 6-WDFN Exposed Pad 6-DFN-EP (2x2) 1.5W 2 P-Channel (Dual) Logic Level Gate 20V 3.8A 70 mOhm @ 3.8A,4.5V 1V @ 250μA 12nC @ 4.5V
CWDM305ND TR13
Central Semiconductor Corp
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
Tape & Reel (TR) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 6.3nC @ 5V
CWDM305ND TR13
Central Semiconductor Corp
2,490
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
Cut Tape (CT) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 6.3nC @ 5V
CWDM305ND TR13
Central Semiconductor Corp
2,490
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.8A 8SOIC
- 8-SOIC (0.154",3.90mm Width) 8-SOIC 2W 2 N-Channel (Dual) Standard 30V 5.8A 30 mOhm @ 2.9A,10V 3V @ 250μA 6.3nC @ 5V