- Packaging：
-
- Series：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- FET Feature：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Selected conditions:
Discover 7 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
|
Tape & Reel (TR) | PowerTrench，SyncFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.5A，7.9A | 29 mOhm @ 6.5A，10V | 3V @ 250μA | 17nC @ 10V | ||
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
|
Cut Tape (CT) | PowerTrench，SyncFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.5A，7.9A | 29 mOhm @ 6.5A，10V | 3V @ 250μA | 17nC @ 10V | ||
|
|
|
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC
|
- | PowerTrench，SyncFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.5A，7.9A | 29 mOhm @ 6.5A，10V | 3V @ 250μA | 17nC @ 10V | ||
|
|
ROHM Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
20V PCH+PCH MIDDLE POWER MOSFET,
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SMD，Flat Lead | TSMT8 | 1.5W | 2 P-Channel (Dual) | - | 30V | 5A | 38 mOhm @ 5A，4.5V | 1.2V @ 1mA | 10.2nC @ 4.5V | |||
|
|
ROHM Semiconductor |
2,651
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
20V PCH+PCH MIDDLE POWER MOSFET,
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SMD，Flat Lead | TSMT8 | 1.5W | 2 P-Channel (Dual) | - | 30V | 5A | 38 mOhm @ 5A，4.5V | 1.2V @ 1mA | 10.2nC @ 4.5V | |||
|
|
ROHM Semiconductor |
2,651
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
20V PCH PCH MIDDLE POWER MOSFET,
|
- | - | -55°C ~ 150°C (TJ) | 8-SMD，Flat Lead | TSMT8 | 1.5W | 2 P-Channel (Dual) | - | 30V | 5A | 38 mOhm @ 5A，4.5V | 1.2V @ 1mA | 10.2nC @ 4.5V | |||
|
|
Toshiba Semiconductor and Storage |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 4CHIPLGA
|
Tape & Reel (TR) | - | 150°C (TJ) | 4-XLGA | 4-Chip LGA | 500mW | 2 N-Channel (Half Bridge) | Standard | - | - | - | 1.2V @ 200μA | - |
