Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 2 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
SIZ720DT-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 16A POWERPAIR
TrenchFET -55°C ~ 150°C (TJ) 6-PowerPair? 6-PowerPair? 27W,48W 2 N-Channel (Half Bridge) 16A 8.7 mOhm @ 16.8A,10V 2V @ 250μA 23nC @ 10V
FDS9933
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A 8SOIC
PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) 5A 55 mOhm @ 3.2A,4.5V 1.2V @ 250μA 20nC @ 4.5V