- Manufacturer：
-
- Series：
-
- Package / Case：
-
- Supplier Device Package：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Selected conditions:
Discover 3 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | |
|
|
|
IXYS |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 300V 290A Y3-DCB
|
HiPerFET | Y3-DCB | Y3-DCB | 1500W | 2 N-Channel (Dual) | 300V | 290A | 8.6 mOhm @ 145A，10V | 4V @ 30mA | 1440nC @ 10V | ||
|
|
Microsemi Corporation |
173
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 495A SP6
|
- | SP6 | SP6 | 1250W | 2 N-Channel (Half Bridge) | 100V | 495A | 2.5 mOhm @ 200A，10V | 4V @ 10mA | 1360nC @ 10V | |||
|
|
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 495A SP6
|
- | SP6 | SP6 | 1250W | 2 N-Channel (Dual) | 100V | 495A | 2.5 mOhm @ 200A，10V | 4V @ 10mA | 1360nC @ 10V |
