Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs
FDS6812A
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6.7A 8SOIC
8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) 6.7A 22 mOhm @ 6.7A,4.5V 19nC @ 4.5V
FDW2503N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5.5A 8TSSOP
8-TSSOP (0.173",4.40mm Width) 8-TSSOP 600mW 2 N-Channel (Dual) 5.5A 21 mOhm @ 5.5A,4.5V 17nC @ 4.5V
FDW2521C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 8-TSSOP
8-TSSOP (0.173",4.40mm Width) 8-TSSOP 600mW N and P-Channel 5.5A,3.8A 21 mOhm @ 5.5A,4.5V 17nC @ 4.5V