Series:
Supplier Device Package:
Power - Max:
FET Feature:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
SI4972DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10.8A 8SOIC
Tape & Reel (TR) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W,2.5W 2 N-Channel (Dual) Standard 10.8A,7.2A 14.5 mOhm @ 6A,10V 3V @ 250μA 28nC @ 10V
SI4972DY-T1-E3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10.8A 8SOIC
Cut Tape (CT) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W,2.5W 2 N-Channel (Dual) Standard 10.8A,7.2A 14.5 mOhm @ 6A,10V 3V @ 250μA 28nC @ 10V
SI4972DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10.8A 8SOIC
- TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W,2.5W 2 N-Channel (Dual) Standard 10.8A,7.2A 14.5 mOhm @ 6A,10V 3V @ 250μA 28nC @ 10V
SI4972DY-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 10.8A 8-SOIC
Tape & Reel (TR) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 3.1W,2.5W 2 N-Channel (Dual) Standard 10.8A,7.2A 14.5 mOhm @ 6A,10V 3V @ 250μA 28nC @ 10V
HP8K22TB
ROHM Semiconductor
2,500
3 days
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MOQ: 1  MPQ: 1
30V NCH+NCH MID POWER MOSFET
Tape & Reel (TR) - 8-PowerTDFN 8-HSOP 25W 2 N-Channel (Half Bridge) - 27A,57A 4.6 mOhm @ 20A,10V 2.5V @ 1mA 16.8nC @ 10V
HP8K22TB
ROHM Semiconductor
2,500
3 days
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MOQ: 1  MPQ: 1
30V NCH NCH MID POWER MOSFET
Cut Tape (CT) - 8-PowerTDFN 8-HSOP 25W 2 N-Channel (Half Bridge) - 27A,57A 4.6 mOhm @ 20A,10V 2.5V @ 1mA 16.8nC @ 10V
HP8K22TB
ROHM Semiconductor
2,500
3 days
-
MOQ: 1  MPQ: 1
30V NCH+NCH MID POWER MOSFET
- - 8-PowerTDFN 8-HSOP 25W 2 N-Channel (Half Bridge) - 27A,57A 4.6 mOhm @ 20A,10V 2.5V @ 1mA 16.8nC @ 10V