Series:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs
CSD75205W1015
Texas Instruments
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.2A 6DSBGA
Tape & Reel (TR) NexFET 6-UFBGA,DSBGA 6-DSBGA (1x1.5) 750mW 2 P-Channel (Dual) 1.2A 120 mOhm @ 1A,4.5V 850mV @ 250μA 2.2nC @ 4.5V
CSD75205W1015
Texas Instruments
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.2A 6DSBGA
Cut Tape (CT) NexFET 6-UFBGA,DSBGA 6-DSBGA (1x1.5) 750mW 2 P-Channel (Dual) 1.2A 120 mOhm @ 1A,4.5V 850mV @ 250μA 2.2nC @ 4.5V
CSD75205W1015
Texas Instruments
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.2A 6DSBGA
- NexFET 6-UFBGA,DSBGA 6-DSBGA (1x1.5) 750mW 2 P-Channel (Dual) 1.2A 120 mOhm @ 1A,4.5V 850mV @ 250μA 2.2nC @ 4.5V
PMDPB28UN,115
NXP USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.6A HUSON6
Tape & Reel (TR) - 6-UDFN Exposed Pad DFN2020-6 510mW 2 N-Channel (Dual) 4.6A 37 mOhm @ 4.6A,4.5V 1V @ 250μA 4.7nC @ 4.5V
PMDPB28UN,115
NXP USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.6A HUSON6
Cut Tape (CT) - 6-UDFN Exposed Pad DFN2020-6 510mW 2 N-Channel (Dual) 4.6A 37 mOhm @ 4.6A,4.5V 1V @ 250μA 4.7nC @ 4.5V
PMDPB28UN,115
NXP USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 4.6A HUSON6
- - 6-UDFN Exposed Pad DFN2020-6 510mW 2 N-Channel (Dual) 4.6A 37 mOhm @ 4.6A,4.5V 1V @ 250μA 4.7nC @ 4.5V